Hirose first appeared on the international stage in 1968 and has crafted a network of sales offices, agents and production facilities around the world. The company continues to broaden the scope of its business activities, keeping pace with market advances and satisfying the changing connector needs of companies around the globe. Hirose's vigorous international strategy rests on three pillars:
Silicon Carbide Shottky Barrier Diode - 5A - Vr: 1200V - Vf: 1.42V - -55°C to 175°C - TO252
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Silicon Carbide Shottky Barrier Diode - 10A - Vr: 1200V - Vf: 1.42V - -55°C to 175°C - TO247-2
Silicon Carbide Shottky Barrier Diode - 6A - Vr: 650V - Vf: 1.45V - -55°C to 175°C - TO220-2
Silicon Carbide Shottky Barrier Diode - 8A - Vr: 650V - Vf: 1.45V - -55°C to 175°C - TO220-2
Silicon Carbide Shottky Barrier Diode - 8A - Vr: 650V - Vf: 1.45V - -55°C to 175°C - TO252
Silicon Carbide Shottky Barrier Diode - 10A - Vr: 650V - Vf: 1.45V - -55°C to 175°C - TO252
Silicon Carbide Shottky Barrier Diode - 20A - Vr: 650V - Vf: 1.45V - -55°C to 175°C - TO247-3
Silicon Carbide Shottky Barrier Diode - 10A - Vr: 650V - Vf: 1.29V - -55°C to 175°C - TO220-2
Silicon Carbide Shottky Barrier Diode - 10A - Vr: 650V - Vf: 1.29V - -55°C to 175°C - TO263
Silicon Carbide Shottky Barrier Diode - 10A - Vr: 650V - Vf: 1.29V - -55°C to 175°C - TO252
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