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MJD112-1G by onsemi
Image is representational - see mfr. specs

MJD112-1G

onsemi

2.0 A, 100 V NPN Darlington Bipolar Power Transistor

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유해물질 제한지침(RoHS) 준수
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2.0 A, 100 V NPN Darlington Bipolar Power Transistor
Search Keywords: MJD1121G
사양 +
  • Product Attribute
    Attribute Value Select Attribute
  • 공급자:
    onsemi
  • 부품 번호:
    MJD112-1G
  • 측정 단위:
    Per Each
  • 유해물질 제한지침(RoHS):
    Yes
  • HTS:
    8541290095
  • COO:
    CN
  • ECCN:
    EAR99
  • 공급자 표준 포장 This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
    75
  • Dimension:
    6.73(Max) x 2.38(Max) x 6.35(Max) mm
  • Family:
    MJD112
  • Maximum Collector Emitter Voltage:
    100 V
  • Maximum Base Emitter Saturation Voltage:
    4@40mA@4A V
  • Maximum Collector Base Voltage:
    100 V
  • Maximum Collector Emitter Saturation Voltage:
    2@8mA@2A,3@40mA@4A V
Tools/3D Models +
Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
재고 보유: 100
즉시 배송 가능
최소 주문:
75
다수:
75
12 Weeks 배송 가능 2. 14. 25
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수량
Unit Price
75
$0.4461
300
$0.4283
1,050
$0.4068
2,550
$0.3876
5,025
$0.3818
7,500
$0.3760
10,050
$0.3704
15,000 +
$0.3648
Suppliers Standard Package
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Item may be subject to tariff fee if shipping within the United States