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IRF820 by samsung semiconductor
Image is representational - see mfr. specs

IRF820

Samsung Semiconductor

Trans MOSFET N-CH 500V 2.5A 3-Pin(3+Tab) TO-220AB

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Descrizione +
Trans MOSFET N-CH 500V 2.5A 3-Pin(3+Tab) TO-220AB
Search Keywords: IRF820
Specifiche +
  • Product Attribute
    Attribute Value Select Attribute
  • fornitore:
    Samsung Semiconductor
  • Codice componente:
    IRF820
  • Unità di misura:
    per Each
  • RoHS :
    No
  • ECCN:
    EAR99
  • Supplier Standard Pack This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
    50
  • Maximum Drain Source Resistance:
    3000@10V mOhm
  • Channel Mode:
    Enhancement
  • Dimension:
    10.1(Max) x 4.7(Max) x 9.4(Max) mm
  • Maximum Continuous Drain Current:
    2.5 A
  • Family:
    IRF820
  • Channel Type:
    N
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