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Trans MOSFET N-CH 500V 2.5A 3-Pin(3+Tab) TO-220AB

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Description +
Trans MOSFET N-CH 500V 2.5A 3-Pin(3+Tab) TO-220AB
Search Keywords: IRF820
spécification +
  • Product Attribute
    Attribute Value Select Attribute
  • fournisseur:
    Samsung Semiconductor
  • Référence:
    IRF820
  • Unité de mesure:
    Per Each
  • RoHS:
    No
  • ECCN:
    EAR99
  • Référence This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
    50
  • Maximum Drain Source Resistance:
    3000@10V mOhm
  • Channel Mode:
    Enhancement
  • Dimension:
    10.1(Max) x 4.7(Max) x 9.4(Max) mm
  • Maximum Continuous Drain Current:
    2.5 A
  • Family:
    IRF820
  • Channel Type:
    N
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  • This product is discontinued, but still in stock.

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