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MJD112-1G by onsemi
Image is representational - see mfr. specs

MJD112-1G

onsemi

2.0 A, 100 V NPN Darlington Bipolar Power Transistor

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Datasheet Accessories Notify Me

RoHS Compliant
Tube Packaging
Certificate of Compliance Guarantee
Description +
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
Search Keywords: MJD1121G
SPECS +
  • Product Attribute
    Attribute Value Select Attribute
  • Supplier:
    onsemi
  • Part No:
    MJD112-1G
  • Unit of Measure:
    Per Each
  • RoHS:
    Yes
  • HTS:
    8541290095
  • COO:
    CN
  • ECCN:
    EAR99
  • Supplier Standard Pack This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
    75
  • Dimension:
    6.73(Max) x 2.38(Max) x 6.35(Max) mm
  • Family:
    MJD112
  • Maximum Collector Emitter Voltage:
    100 V
  • Maximum Base Emitter Saturation Voltage:
    4@40mA@4A V
  • Maximum Collector Base Voltage:
    100 V
  • Maximum Collector Emitter Saturation Voltage:
    2@8mA@2A,3@40mA@4A V
Tools/3D Models +
Product Guides +
Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
In Stock: 100
Can Ship immediately
Minimum Order:
75
Order Increment:
75
12 Weeks can ship 2/17/25
ADD TO CART
Qty
Unit Price
75
$0.4461
300
$0.4283
1,050
$0.4068
2,550
$0.3876
5,025
$0.3818
7,500
$0.3760
10,050
$0.3704
15,000 +
$0.3648
Suppliers Standard Package
Click for Quote
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Item may be subject to tariff fee if shipping within the United States