GeneSiC’s SiC (Silicon Carbide)  Metal Oxide Silicon Field Effect Transistor or Metal Oxide Semiconductor Field Effect Transistors (MOSFET) deliver higher blocking voltage with lower on state resistance and higher thermal conductivity compared to silicon alternatives. They can be used for medium-voltage power conversion applications such as traction, pulsed power and smart grid infrastructure.

The GeneSic 6.5k bare die SiC MOSFETs are designated G2R300MT65-CAL and G2R325MS65-CAL with full SiC modules using the technology being released soon, the company told Electronics Weekly.

“This device can be used in a variety of power conversion circuits. Other advantages include more efficient bi-directional performance, temperature independent switching, low switching and conduction losses, reduced cooling requirements, superior long-term reliability, ease of paralleling devices and cost benefits,” Electronics Weekly explained.

GeneSiC’s devices have a SiC double-implanted metal oxide semiconductor (DMOSFET) device structure with a junction barrier schottky (JBS) rectifier integrated into the SiC DMOSFET unit cell. Applications are expected to include traction, pulsed power, smart grid infrastructure and other medium-voltage power converters.

The devices are:

G2R300MT65-CAL – 6.5kV 300mΩ G2RTM SiC MOSFET Bare Chip

G2R325MS65-CAL – 6.5kV 325mΩ G2RTM SiC MOSFET (with Integrated-Schottky)Bare Chip

G2R100MT65-CAL – 6.5kV 100mΩ G2RTM SiC MOSFET Bare Chip